The world's first 4Gb DDR3 DRAM chip is here, courtesy Samsung. The latest development by Samsung will help in reducing data center costs, improving server time management and increasing overall efficiency. According to Samsung for the new generation of “green” servers, the 4Gb DDR3’s high density combined with its lower level of power consumption will not only provide a reduction in electricity bills, but also a cutback in installment fees, maintenance fees and repair fees involving power suppliers and heat-emitting equipment.

The 4Gb DDR3 can be produced in 16 gigabyte (GB) registered dual in-line memory modules (RDIMM) for servers, as well as 8GB unbuffered DIMM (UDIMM) for workstations and desktop PCs, and 8GB small outline DIMM (SODIMM) for laptops. By applying dual-die package technology, this new device can deliver modules of up to 32GB – offering twice as much capacity as memory modules based on the previous highest chip density of 2Gb.

Designed to be low-powered, the 4Gb DDR3 DRAM operates at 1.35 volts (V), therein improving its throughput by 20 percent over a 1.5V DDR3. Its maximum speed is 1.6 gigabits per second (Gbps).

In 16GB module configurations, 4Gb DDR3 can consume 40 percent less power than 2Gb DDR3 because of its higher density and because it uses only half the DRAM (32 vs. 64 chips).