Micron intros low-voltage, high-bandwidth DDR3 memory modules

micron_logo.jpg Micron today introduced new memory modules. The 2GB and 4GB DDR3 modules are designed for notebooks, optimizing battery life. According to Micron, the new line of low-voltage, high-bandwidth DDR3 memory modules provide an ideal combination of performance and power efficiency. The modules are designed using the industry’s lowest 1.35-volt 1-gigabit (Gb) DDR3 components, allowing for even greater power savings compared to standard 1.5-volt DDR3. More importantly, this low-power is achieved without compromise to memory performance - the modules provide an optimum bandwidth of 1,333 megabits per second.

“Across the board, we are making our DRAM more efficient – from both a power and performance perspective – which ultimately empowers users to be more productive,” said Robert Feurle, vice president of DRAM marketing at Micron. “Our new DDR3 notebook modules offer approximately a 20 percent reduction in power usage compared to standard 1.5-volt modules while maintaining DDR3’s high performance advantage, enabling a desktop-class computing experience for portable computers.”

The 2GB modules are now available, with 4GB samples coming this fall.

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