Hynix recently announced the world’s first mobile 1Gb DDR2 DRAM using 54nm process technology. The newest Hynix DRAM is designed for next generation mobile applications such as MID (Mobile Internet Device), NetBooks and High-end smartphones requiring high bandwidth and extended battery life. The low power memory offers a maximum speed of 1066MHz, with 32-bit I/O, boasting bandwidth of 4.26GB/s on a single channel and 8.52GB/s on a dual channel.

According to Hynix, it's new mobile DDR2 is an eco-friendly device consuming only 50% of power compared to the previous generation mobile DDR, and 30% compared to standard DDR2 DRAM.

Hynix’s ‘One Chip Solution’ design, offers the customer flexible options with 2-bit or 4-bit prefetch, and 16 or 32-bit I/O on a single chip.

Hynix plans to start mass production of this product in the second half of this year.