Samsung intros industry’s first 30nm, 3-bit Multi-Level-Cell NAND chips
Samsung announced today that it commenced the industry’s first volume production of 3-bit, multi-level-cell (MLC) NAND flash chips using 30nm process technology at the end of November. The chips will be used in NAND flash modules accompanied by exclusive Samsung 3-bit NAND controllers to initially produce eight gigabyte (GB) micro Secure Digital (microSD) cards.
Samsung reports that the three-bit MLC NAND increases the efficiency of NAND data storage by 50 percent over today’s pervasive 2-bit MLC NAND chips.
So where it would be used? Well, Samsung’s new 30nm-class 3-bit MLC NAND will provide consumers with effective NAND-based storage that can be applied to USB flash drives in addition to a range of micro SD cards.
