Samsung develops 4GB DDR2 DIMM via new stacking technology
Samsung has announced that it has developed the first all-DRAM stacked memory package using ‘through silicon via’ (TSV) technology that makes memory more faster, smaller and power efficient. The new wafer-level-processed stacked package (WSP) consists of four 512 MB DDR2 chips that offer a combined 2GB of high density memory. Using the TSV-processed 2GB DRAMs, Samsung can create a 4GB DIMM.
“The innovative TSV-based MCP (multi-chip package) stacking technology offers next-generation packaging solution that will accommodate the ever-growing demand for smaller-sized, high-speed, high-density memory,” said Tae-Gyeong Chung, vice president, Interconnect Technology Development Team, Memory Division, Samsung Electronics. “In addition, the performance advancements achieved by our WSP technology can be utilized in many diverse combinations of semiconductor packaging, such as system-in-package solutions that combine logic with memory.”
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