Samsung develops 30nm 2Gb DRAM
Samsung Electronics today announced that it has successfully developed industry’s first 30nm DRAM, in 2Gb densities. According to Sammy, this new memory chip would help raise productivity and expedite dissemination of high performance, 1.5V and 1.35V DDR3 for servers, desktops and notebook PCs.
The firm further reports that the 30nm-class process when applied to DDR3 mass production raises productivity by 60 percent over 40nm-class DDR3. This will result in a doubling of production cost-efficiency compared to DRAM produced using 50nm to 60nm-class technology.
The 30nm-class 2Gb, Green DRAM also reduces power consumption by up to 30% over 50nm-class DRAM. A 4GB, 30nm module when used in a new-generation notebook will consume only three watts per hour, which is just three percent of the total power usage of a notebook.
The new DDR3 will be used in a broader range of products, from servers to notebooks, desktops, and future versions of netbooks and mobile devices.
The 30nm-class DDR3 is scheduled for mass production in the second half of this year.
