Samsung announces 30nm-class asynchronous DDR NAND flash
Samsung today announced the industry’s first mass production of its 30nm, 32 gigabit (Gb), multi-level-cell (MLC) NAND memory with an asynchronous DDR (double data rate) interface. Samsung’s new DDR MLC NAND chip, which reads at 133 megabits per second (Mbps) would replace single data rate (SDR) MLC NAND, which has an overall read performance of 40Mbps. Samsung’s new asynchronous DDR MLC NAND can be used in SSDs, premium SD memory cards, PMPs, MP3 players and car navigation systems (CNS).
According to Sammy, DDR NAND will sharply raise the read performance of mobile devices requiring high-speeds and large amounts of storage space.
Samsung further reports that the use of 30nm-class DDR NAND enables premium memory cards to register 60Mbps read speeds, at least a 300 percent performance gain compared to SDR NAND-based memory cards with an average 17Mbps read speed.
The company said it began shipping initial production of its DDR NAND to major OEMs at the end of November.
