Samsung 40nm DRAM chip expected to save 30 percent power
Samsung has announced its new DRAM chip, made using the latest 40nm fabrication process, which is expected to save up to 30% power. This new 1-Gigabit DDR2 component (x8) and a corresponding 1-Gigabyte 800Mbps (Megabits per second) DDR2 SODIMM (small outline DRAM inline memory module) have also been certified in the Intel Platform Validation program for use with the Intel GM45 series Express mobile chipsets.
According to Samsung, the migration to 40-nm class process technology is expected to accelerate the time-to-market cycle by 50 percent – to just one year. The new 40-nm class process technology will drive further reductions in voltage against a 50-nm class device, which Samsung expects to translate into about a 30 percent power savings
The finer DRAM technology node also delivers an approximately 60 percent increase in productivity over 50-nm class process technology.
