Micron, Nanya intros 42nm DRAM process technology
Micron and Nanya today announced that they have jointly developed a 2-gigabit (Gb) DDR3 memory device using their new copper-based 42nm DRAM process technology. The new 42nm process now makes 1.35-volts the standard, mainstream voltage requirement, compared to 1.5-volt with previous generations. Interesting thing about this newest memory module is that it also reduces power consumption — the 1.35 voltage can provide a savings of up to 30-percent.
By shrinking process technology, the new 2Gb 42nm DDR3 device delivers improved memory performance capable of reaching up to 1866 megabits per second. In addition, the small die size coupled with the 2Gb density of the 42nm DDR3 device enables modules up to 16GBs.
Micron reports that sampling is scheduled to start in the second calendar quarter of 2010, with production ramp planned for the second half of the year.
