Micron intros low-voltage, high-bandwidth DDR3 memory modules
Micron today introduced new memory modules. The 2GB and 4GB DDR3 modules are designed for notebooks, optimizing battery life. According to Micron, the new line of low-voltage, high-bandwidth DDR3 memory modules provide an ideal combination of performance and power efficiency. The modules are designed using the industry’s lowest 1.35-volt 1-gigabit (Gb) DDR3 components, allowing for even greater power savings compared to standard 1.5-volt DDR3. More importantly, this low-power is achieved without compromise to memory performance – the modules provide an optimum bandwidth of 1,333 megabits per second.
“Across the board, we are making our DRAM more efficient – from both a power and performance perspective – which ultimately empowers users to be more productive,” said Robert Feurle, vice president of DRAM marketing at Micron. “Our new DDR3 notebook modules offer approximately a 20 percent reduction in power usage compared to standard 1.5-volt modules while maintaining DDR3’s high performance advantage, enabling a desktop-class computing experience for portable computers.”
The 2GB modules are now available, with 4GB samples coming this fall.
