Micron intros first DDR3 load-reduced, dual-inline memory module
Micron today announced that it has produced industry’s first DDR3 load-reduced, dual-inline memory module (LRDIMM) and will begin sampling 16GB versions this fall. By reducing load on the server memory bus, Micron’s LRDIMMs provide the option to support higher data frequencies and significantly increase memory capacity. The new LRDIMMs will be manufactured using Micron’s leading-edge 1.35-volt, 2-gigabit (Gb) 50-nanometer DDR3 memory chips, allowing the company to easily and cost-effectively increase server module capacity because of the chips’ high-density and industry-leading small die size.
Today, using RDIMMs, a typical server system can accommodate up to three quad-rank 16GB RDIMMS per processor. However, that same system can support up to nine quad-rank 16GB LRDIMMS per processor, pushing the memory capacity from 48GB to 144GB.
Measuring performance levels, Micron’s 16GB LRDIMM offers an increase of 57 percent in system memory bandwidth, when compared to an RDIMM. And as server power consumption continues to be a top concern for customers, Micron’s LRDIMMs will also operate at the industry’s lowest 1.35-volts.
