Micron intros 34nm Multi-Level Cell NAND for enterprise storage systems providing 6x endurance
Micron has done it again. The firm recently introduced a new, improved Multi-Level Cell NAND. The newly improved NAND is manufactured using 34nm process technology, and claims to increase endurance by 6x. It is designed for enterprise storage systems, and achieves 30,000 write cycles (MLC NAND) / 300,000 write cycles (SLC NAND).
Additionally, Micron’s newest Enterprise NAND products also support the ONFI 2.1 synchronous interface, delivering a 4- to 5x improvement in data transfer rates when compared to legacy NAND interfaces.
Micron’s 32Gb MLC and 16Gb SLC Enterprise NAND technology can be configured into multi-die, single packages enabling densities up to 32-gigabyte (GB) for MLC and 16GB for SLC.
