Intel and Micron today announced a new benchmark in NAND flash technology — the world’s first 20nm 128Gb multilevel-cell (MLC) device. The new 128Gb NAND device is ideal for tablets, smartphones, SSDs, and high-performance compute devices and can store 1 terabit of data in a single fingertip-size package with just eight die.
The companies’ 20nm NAND is the first to use an innovative planar cell structure that overcomes the scaling constraints of standard floating gate NAND cell by integrating the first Hi-K/metal gate stack on NAND production..
The 128Gb device meets the high-speed ONFI 3.0 specification to achieve speeds of 333 megatransfers per second (MT/s).
The companies also announced that they have started production of their 20nm 64Gb NAND flash product and will do a rapid transition to the 128Gb device in 2012.
Samples of the 128Gb device will be available in January, closely followed by mass production in the first half of 2012.