IBM develops industry’s densest, fastest 32nm DRAM
IBM recently announced that it has developed the semiconductor industry’s smallest, densest and fastest on-chip dynamic memory device in next-generation, 32-nanometer, silicon-on-insulator (SOI) technology. In short the latest DRAM can offer improved speed, power savings and reliability for products ranging from servers to consumer electronics. According to IBM, its SOI technology can provide up to a 30% chip performance improvement and 40% power reduction. And thanks to increased density, in future we can have chips that are smaller, more efficient and can process more data, improving system performance.
IBM’s eDRAM cell is twice as dense as any announced 22nm embedded SRAM cell – including the world’s smallest 22-nanometer memory cell announced by IBM in August 2008 – and up to four times as dense as any comparable 32nm embedded SRAM in the industry.
IBM intends to bring the benefits of its 32-nanometer SOI technology to a wide range of application-specific integrated circuit (ASIC) and foundry clients and will use the technology in chips for its servers.
IBM already is engaged with early access foundry clients in 32nm technology and ARM is developing design libraries for the technology. An initial 32nm ARM library is available now and IBM has extended this collaboration to include 22nm SOI technology, enabling ARM to gain early access to this technology.
