Today IBM & Alliance including Chartered Semiconductor, GLOBALFOUNDRIES, Infineon, Samsung, and STMicroelectronics announced a new 28nm high-k metal gate, low-power bulk complementary metal oxide semiconductor (CMOS) process technology. The low-power, 28nm technology platform can provide power-performance and time-to-market advantages for producers of a broad range of power-sensitive mobile and consumer electronics applications, including the fast-growing mobile Internet device market segment.

The best thing about this development is that the new 28nm chip can provide a 40 percent performance improvement and a more than 20 percent reduction in power -- all in a chip that is half the size -- compared with 45nm technology.