Samsung’s 50-nm 16GB NAND Flash
Samsung Electronics has manufactured their first 16GB NAND flash using a 50-nanometer process technology. The flash memory features a multi-level cell (MLC) design with a 4KB page size that increases the read and write performance. The company has successfully increased the read speed by two times and the writing speed by 150% by opting for 4KB page size instead of 2KB page size. The early introduction of this drive is expected to accelerate the demand for flash memory based disks. Samsung will start the manufacturing this disc in the first quarter of 2007.
